ITS716GFUMA1 vs BTS5215LAUMA1 Perbandingan

Perbandingan bersamaan detil ITS716GFUMA1 dari Infineon dan BTS5215LAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ITS716GFUMA1 BTS5215LAUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Smart High-Side Power Switch Smart High-Side Power Switch
Number of Channels 4 2
Konfigurasi Output High-side (N-Channel MOSFET) —
Continuous Current per Channel 2.3 A —
On-State Resistance (RON) per Channel [DATA_NEEDED: Ron typical value] —
Operating Voltage Range (Vbb) 5 V to 36 V —
Load Dump Tolerance Up to 45 V —
Standby Current [DATA_NEEDED: Iq standby typical] Very low (datasheet value [DATA_NEEDED: standby current uA])
Input Logic Levels CMOS/TTL compatible, parallel interface —
Diagnostic Output Open-drain fault flag, one per channel —
Protection Features Overload, short-circuit, over-temperature, over-voltage, ESD Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage
PWM Capability Up to 1 kHz —
Rentang Suhu Kerja -40 C to +85 C (industrial grade) —
Paket PG-DSO-20-32 (20-pin SOIC, exposed pad) PG-DSO-12-9
Tahanan Panas, Hubung-lingkungan [DATA_NEEDED: theta_JA value] —
Tipe Mounting Surface Mount —
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
On-State Resistance (RDS(on)) — 90 mΩ typical per channel
Continuous Output Current per Channel — 3.7 A
Operating Voltage Range — 8 V to 36 V
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Status feedback per channel
MOSFET Technology — N-channel vertical power MOSFET with charge pump
Load Type Support — Resistive and inductive loads
Demagnetization — Fast demagnetization of inductive loads
Suhu Kerja — -40C to +150C (TJ) [DATA_NEEDED: ambient range exact]

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