ITS716GFUMA1 vs BTS5215LAUMA1 比較

詳細並排比較 ITS716GFUMA1 由 Infineon 與 BTS5215LAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 ITS716GFUMA1 BTS5215LAUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Smart High-Side Power Switch Smart High-Side Power Switch
Number of Channels 4 2
輸出配置 High-side (N-Channel MOSFET) —
Continuous Current per Channel 2.3 A —
On-State Resistance (RON) per Channel [DATA_NEEDED: Ron typical value] —
Operating Voltage Range (Vbb) 5 V to 36 V —
Load Dump Tolerance Up to 45 V —
Standby Current [DATA_NEEDED: Iq standby typical] Very low (datasheet value [DATA_NEEDED: standby current uA])
Input Logic Levels CMOS/TTL compatible, parallel interface —
Diagnostic Output Open-drain fault flag, one per channel —
Protection Features Overload, short-circuit, over-temperature, over-voltage, ESD Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage
PWM Capability Up to 1 kHz —
工作溫度範圍 -40 C to +85 C (industrial grade) —
封裝 PG-DSO-20-32 (20-pin SOIC, exposed pad) PG-DSO-12-9
熱阻,接面至環境 [DATA_NEEDED: theta_JA value] —
安裝類型 Surface Mount —
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Compliant
On-State Resistance (RDS(on)) — 90 mΩ typical per channel
Continuous Output Current per Channel — 3.7 A
Operating Voltage Range — 8 V to 36 V
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Status feedback per channel
MOSFET Technology — N-channel vertical power MOSFET with charge pump
Load Type Support — Resistive and inductive loads
Demagnetization — Fast demagnetization of inductive loads
工作溫度 — -40C to +150C (TJ) [DATA_NEEDED: ambient range exact]

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