K3LK4L40DM-BGCT vs K4A4G085WD-BCRC Perbandingan
Perbandingan bersamaan detil K3LK4L40DM-BGCT dari Samsung Electronics dan K4A4G085WD-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K3LK4L40DM-BGCT | K4A4G085WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DRAM (SDRAM component) | DDR4 SDRAM (D-die) |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Laju Data | [DATA_NEEDED: Data Rate] | 2400 Mb/s (PC2400) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Level MSL | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: MSL Level] |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Memory Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Tegangan Pemuat | — | 1.2 V |
| Paket | — | FBGA-78 (TFBGA) |
| Number of Terminals | — | 78 |
| Antarmuka | — | Parallel |
| Access Mode | — | Multi-bank page burst |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | [DATA_NEEDED: Refresh specification] |