K4A4G165WD-BCPB vs MT40A256M16GE-075E:B Perbandingan
Perbandingan bersamaan detil K4A4G165WD-BCPB dari Samsung Electronics dan MT40A256M16GE-075E:B dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A4G165WD-BCPB | MT40A256M16GE-075E:B |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3,95 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 2133 MT/s | 2666 MT/s (DDR4-2666) |
| Core Voltage | 1.2 V | — |
| Paket | FBGA-96 | 96-FBGA (9 x 14 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Die Generation | D-die | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| Antarmuka | DDR4 (synchronous, source-synchronous strobe) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for standard grade] |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| Status RoHS | Compliant (lead-free suffix) | — |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| Ukuran Memori | — | 4 Gbit |
| Memory Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |