K4A4G165WD-BCRC vs K4A4G165WD-BCPB Perbandingan
Perbandingan bersamaan detil K4A4G165WD-BCRC dari Samsung Electronics dan K4A4G165WD-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WD-BCRC | K4A4G165WD-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Tegangan Pemuat | 1.2 V | — |
| Paket | FBGA-96 | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Tipe Antarmuka | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | Lead free / RoHS Compliant | Compliant (lead-free suffix) |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Laju Data | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Antarmuka | — | DDR4 (synchronous, source-synchronous strobe) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |