K4A4G165WD-BCRC vs K4A4G165WD-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCRC sa pamamagitan ng Samsung Electronics at K4A4G165WD-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCRC | K4A4G165WD-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasyon | 256M x 16 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-96 | FBGA-96 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Uri ng Interface | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | Lead free / RoHS Compliant | Compliant (lead-free suffix) |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Rate ng Data | — | 2133 MT/s |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Interface | — | DDR4 (synchronous, source-synchronous strobe) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |