K4A8G085WC-BCWE vs MT40A1G8AG-062E Perbandingan
Perbandingan bersamaan detil K4A8G085WC-BCWE dari Samsung Electronics dan MT40A1G8AG-062E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WC-BCWE | MT40A1G8AG-062E |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $7,38 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 3200 Mbps (DDR4-3200) | — |
| Tegangan Pemuat | 1.2 V | — |
| Suhu Kerja | 0C to +85C | — |
| Paket | 78FBGA | 78-FBGA (7.5 x 11 mm) |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Antarmuka | DDR4 (parallel, double data rate) | Parallel |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | Yes (DDR4 bank groups) |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| Status RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Ukuran Memori | — | 8 Gbit |
| Clock Frequency | — | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) |
| Clock Cycle Time | — | 19 ns class (-062E speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Temperature Grade | — | Automotive (AUT) |
| Access Time (CAS Latency class) | — | DDR4-3200 timing class (tAA per datasheet) |
| Termination | — | On-Die Termination (ODT) |
| CA Parity | — | Supported (DDR4 command/address parity) |
| Packaging Option | — | Tape and Reel (TR / :R suffix) |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |