K4A8G085WC-BCWE vs MT40A1G8AG-062E 比較
詳細並排比較 K4A8G085WC-BCWE 由 Samsung Electronics 與 MT40A1G8AG-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WC-BCWE | MT40A1G8AG-062E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $7.38 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 組織 | 1G x 8 | 1G x 8 |
| 資料速率 | 3200 Mbps (DDR4-3200) | — |
| 供應電壓 | 1.2 V | — |
| 工作溫度 | 0C to +85C | — |
| 封裝 | 78FBGA | 78-FBGA (7.5 x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 介面 | DDR4 (parallel, double data rate) | Parallel |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | Yes (DDR4 bank groups) |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS 狀態 | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| 記憶體容量 | — | 8 Gbit |
| Clock Frequency | — | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) |
| Clock Cycle Time | — | 19 ns class (-062E speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Temperature Grade | — | Automotive (AUT) |
| Access Time (CAS Latency class) | — | DDR4-3200 timing class (tAA per datasheet) |
| Termination | — | On-Die Termination (ODT) |
| CA Parity | — | Supported (DDR4 command/address parity) |
| Packaging Option | — | Tape and Reel (TR / :R suffix) |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |