K4A8G165WB-BCPB vs K4A8G165WC-BCTD Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCPB dari Samsung Electronics dan K4A8G165WC-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCPB | K4A8G165WC-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x16 |
| Laju Data | 2133 Mbps | 2666 Mbps (DDR4-2666) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Suhu Kerja | 0C to +85C | 0C to +95C |
| Paket | 96FBGA (TFBGA) | 96FBGA |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | C-die (1Y nm-class process) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | DDR4 (synchronous, double data rate) | — |
| Bank Groups | DDR4 bank-group architecture | — |
| Status RoHS | Compliant (per Lisleapex listing) | Compliant |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Clock Frequency | — | 1.333 GHz |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| CRC Function | — | Yes (write CRC) |
| ZQ Calibration | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| Data Mask | — | Yes (x16 DM) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |