K4A8G165WB-BCTD vs K4A8G165WB-BCPB Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCTD dari Samsung Electronics dan K4A8G165WB-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCTD | K4A8G165WB-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Laju Data | 2666 Mbps | 2133 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| Paket | 96FBGA | 96FBGA (TFBGA) |
| Die Generation | B-die | 8Gb B-die |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Antarmuka | DDR4 (parallel, double data rate) | DDR4 (synchronous, double data rate) |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Status RoHS | Compliant (per JLCPCB listing: ROHS) | Compliant (per Lisleapex listing) |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Bank Groups | — | DDR4 bank-group architecture |
| Refresh | — | [DATA_NEEDED: refresh specification] |