K4A8G165WB-BCTD vs K4A8G165WB-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCTD sa pamamagitan ng Samsung Electronics at K4A8G165WB-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ NakahandaSamsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCTD | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 512M x 16 | 512M x 16 |
| Rate ng Data | 2666 Mbps | 2133 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Temperature na Operasyon | 0C to +85C | 0C to +85C |
| Packhaging | 96FBGA | 96FBGA (TFBGA) |
| Die Generation | B-die | 8Gb B-die |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | DDR4 (synchronous, double data rate) |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Tindminan RoHS | Compliant (per JLCPCB listing: ROHS) | Compliant (per Lisleapex listing) |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Bank Groups | — | DDR4 bank-group architecture |
| Refresh | — | [DATA_NEEDED: refresh specification] |