K4B4G1646D-BMK0 vs K4B4G1646Q Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BMK0 dari Samsung Electronics dan K4B4G1646Q dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BMK0 | K4B4G1646Q |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) | — |
| Voltage | 1.35 V | — |
| Suhu Kerja | -40°C to 95°C | [DATA_NEEDED: Operating temperature range] |
| Paket | 96FBGA (TFBGA) | 96-ball FBGA |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Die Version | D-die | — |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | Yes |
| RoHS Compliant | Yes | Yes |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Number of Functions | 1 | — |
| Laju Data | 1600 Mbps | 1866 Mbps (PC3-14900) |
| Lebar Bus Data | — | 16 bits |
| Tegangan Pemuat | — | 1.35V |
| Die | — | Q-die |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| Latensi CAS | — | Programmable |