K4RAH086VE-BCWM vs PDRQLAKCDF12-00 Perbandingan
Perbandingan bersamaan detil K4RAH086VE-BCWM dari Samsung Electronics dan PDRQLAKCDF12-00 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ AktifSamsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4RAH086VE-BCWM | PDRQLAKCDF12-00 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $7,60 | — |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasi | 2G x 8 | 1G x 16 |
| Laju Data | 5600 Mbps | 7200 Mbps per pin |
| Supply Voltage (VDD) | 1.1 V | — |
| Paket | 82-ball FBGA | 102-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Generation | DDR5 | DDR5 (improved from 6400 Mbps generation) |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| Latensi CAS | [DATA_NEEDED: CL at 5600 Mbps] | [DATA_NEEDED: CAS latency] |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Status Lingkungan Hidup | Mass Production | — |
| Manufacturer | Samsung Electronics | — |
| Speed Bin | — | DDR5-7200 |
| Operating Voltage | — | 1.1 V |
| Antarmuka | — | JEDEC DDR5 |
| Package Height | — | [DATA_NEEDED: package height] |
| tCK / Cycle Time | — | [DATA_NEEDED: clock cycle time] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |