K4RHE165VB-BCWM vs K4RBH086VB-BCWM Perbandingan
Perbandingan bersamaan detil K4RHE165VB-BCWM dari Samsung Electronics dan K4RBH086VB-BCWM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4RHE165VB-BCWM | K4RBH086VB-BCWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 16 Gb |
| Organisasi | 1G x 16 | 2G x 8 |
| Laju Data | 5600 Mbps | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] |
| Tegangan Pemuat | 1.1 V | 1.1 V |
| Paket | 106 FBGA | 82-FBGA |
| Suhu Kerja | 0 C to +85 C | 0 C to 85 C |
| Product Status | Mass Production | Mass Production |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel, DDR5 | Parallel, DDR5 |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Memory Format | — | Volatile (DRAM) |
| Technology | — | DDR5 SDRAM |
| Manufacturer | — | Samsung Semiconductor |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| On-Die ECC | — | Yes (per JEDEC DDR5 specification) |