K4RHE165VB-BCWM vs K4RBH086VB-BCWM 比較
詳細並排比較 K4RHE165VB-BCWM 由 Samsung Electronics 與 K4RBH086VB-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RHE165VB-BCWM | K4RBH086VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 16 Gb |
| 組織 | 1G x 16 | 2G x 8 |
| 資料速率 | 5600 Mbps | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] |
| 供應電壓 | 1.1 V | 1.1 V |
| 封裝 | 106 FBGA | 82-FBGA |
| 工作溫度 | 0 C to +85 C | 0 C to 85 C |
| Product Status | Mass Production | Mass Production |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Parallel, DDR5 | Parallel, DDR5 |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Memory Format | — | Volatile (DRAM) |
| Technology | — | DDR5 SDRAM |
| Manufacturer | — | Samsung Semiconductor |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| On-Die ECC | — | Yes (per JEDEC DDR5 specification) |