K9EUGY8S0M-BCK0 vs K9CHGY8S5C-CCK0 Perbandingan
Perbandingan bersamaan detil K9EUGY8S0M-BCK0 dari Samsung Electro-Mechanics dan K9CHGY8S5C-CCK0 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ AktifSamsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K9EUGY8S0M-BCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series V-NAND Flash | — |
| Tipe Memori | NAND Flash (non-volatile) | — |
| Density | [DATA_NEEDED: memory density] | [DATA_NEEDED: total density in Gb] |
| Organisasi | [DATA_NEEDED: organization x8/x16] | x8 (8-bit data access), quad CE configuration |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | — |
| Tegangan Pemuat | [DATA_NEEDED: VCC voltage] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Access Time (tR) | [DATA_NEEDED: read access time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Paket | [DATA_NEEDED: package type and dimensions] | BGA-316 |
| Suhu Kerja | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Tipe Mounting | Surface Mount | Surface Mount (BGA reflow) |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packing | [DATA_NEEDED: tray or tape and reel] | — |
| Product Type | — | NAND Flash Memory |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Tipe Antarmuka | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |