K9F2808UOC-PCB0 vs MT29F1G08ABAEAWP-IT:E Perbandingan
Perbandingan bersamaan detil K9F2808UOC-PCB0 dari Samsung Electronics dan MT29F1G08ABAEAWP-IT:E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K9F2808UOC-PCB0 | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | NRND | Aktif |
| Tipe Memori | NAND Flash (SLC, Small-Page) | — |
| Memory Density | 128 Mbit (16M x 8) | — |
| Organisasi | 16M x 8 bit | 128M x 8 |
| Operating Voltage (VCC) | 2.7 V to 3.6 V | — |
| Read Access Time | 50 ns | — |
| Page Size | 528 bytes (512 main + 16 spare) | 2048 bytes + 64 bytes spare |
| Block Size | 16 pages (16 KiB + 256 spare bytes) | 128 KB |
| Package Options | 48-TSOP I, 48-WSOP1, 63-TBGA | — |
| I/O Bus Width | x8 | — |
| Suhu Kerja | Commercial / Industrial (C, I grade) | -40C to +85C |
| Command Set | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) | — |
| Status Output | R/B# open-drain ready/busy | — |
| Technology Node | Samsung 2nd-generation SLC NAND | — |
| Cell Type | Single-Level Cell (SLC) | — |
| Programming Model | Page program, block erase | — |
| Lead-Free / RoHS | [DATA_NEEDED: RoHS status from Samsung datasheet] | — |
| Ukuran Memori | — | 1 Gbit (128 MB) |
| Antarmuka | — | Parallel |
| Tegangan Pemuat | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |
| Data Retention | — | 10 years |
| Paket | — | TSOP-48 |
| Tipe Mounting | — | Surface Mount |
| Status RoHS | — | Compliant |