K9F2808UOC-PCB0 vs MT29F1G08ABAEAWP-IT:E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9F2808UOC-PCB0 sa pamamagitan ng Samsung Electronics at MT29F1G08ABAEAWP-IT:E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K9F2808UOC-PCB0 | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Uri ng Memory | NAND Flash (SLC, Small-Page) | — |
| Memory Density | 128 Mbit (16M x 8) | — |
| Organisasyon | 16M x 8 bit | 128M x 8 |
| Operating Voltage (VCC) | 2.7 V to 3.6 V | — |
| Read Access Time | 50 ns | — |
| Page Size | 528 bytes (512 main + 16 spare) | 2048 bytes + 64 bytes spare |
| Block Size | 16 pages (16 KiB + 256 spare bytes) | 128 KB |
| Package Options | 48-TSOP I, 48-WSOP1, 63-TBGA | — |
| I/O Bus Width | x8 | — |
| Temperature na Operasyon | Commercial / Industrial (C, I grade) | -40C to +85C |
| Command Set | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) | — |
| Status Output | R/B# open-drain ready/busy | — |
| Technology Node | Samsung 2nd-generation SLC NAND | — |
| Cell Type | Single-Level Cell (SLC) | — |
| Programming Model | Page program, block erase | — |
| Lead-Free / RoHS | [DATA_NEEDED: RoHS status from Samsung datasheet] | — |
| Laki ng Memory | — | 1 Gbit (128 MB) |
| Interface | — | Parallel |
| Volte ng Pagbibigay | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |
| Data Retention | — | 10 years |
| Packhaging | — | TSOP-48 |
| Uri ng Pagpapasok | — | Surface Mount |
| Tindminan RoHS | — | Compliant |