K9XXG08UXM vs K9LCG08U1M Perbandingan
Perbandingan bersamaan detil K9XXG08UXM dari Samsung Electronics dan K9LCG08U1M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K9XXG08UXM | K9LCG08U1M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Ukuran Memori | 2G x 8 Bit (2Gb) | — |
| Memory Cell Array Organization | (1G + 32M) bit x 8 bit | — |
| Data Register | (2K + 64) bit x 8 bit | — |
| Tegangan Pemuat | 2.7 V to 3.6 V | [DATA_NEEDED: supply voltage] |
| Page Size | (2K + 64) Byte | [DATA_NEEDED: page size] |
| Block Size | (256K + 8K) Byte | [DATA_NEEDED: block size] |
| Program Operation | Automatic Page Program, (2K + 64) Byte | — |
| Erase Operation | Automatic Block Erase, (256K + 8K) Byte | — |
| I/O Interface | 8-bit multiplexed address/data/command | — |
| Control Signals | CLE, ALE, CE, RE, WE, WP, R/B | — |
| Cell Type | SLC (single-level cell) NAND | MLC (2 bits per cell) |
| Paket | 48-pin TSOP | BGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Access Time (tR) | [DATA_NEEDED: Access Time] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Tipe Memori | — | NAND Flash, MLC |
| Density | — | 64 Gbit (8 GB) |
| Organisasi | — | x8 I/O |
| Antarmuka | — | Asynchronous multiplexed NAND I/O |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |