K9XXG08UXM vs K9LCG08U1M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9XXG08UXM disebabkan oleh Samsung Electronics dan K9LCG08U1M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9XXG08UXM | K9LCG08U1M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Saiz Ingatan | 2G x 8 Bit (2Gb) | — |
| Memory Cell Array Organization | (1G + 32M) bit x 8 bit | — |
| Data Register | (2K + 64) bit x 8 bit | — |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | [DATA_NEEDED: supply voltage] |
| Page Size | (2K + 64) Byte | [DATA_NEEDED: page size] |
| Block Size | (256K + 8K) Byte | [DATA_NEEDED: block size] |
| Program Operation | Automatic Page Program, (2K + 64) Byte | — |
| Erase Operation | Automatic Block Erase, (256K + 8K) Byte | — |
| I/O Interface | 8-bit multiplexed address/data/command | — |
| Control Signals | CLE, ALE, CE, RE, WE, WP, R/B | — |
| Cell Type | SLC (single-level cell) NAND | MLC (2 bits per cell) |
| Kemasan | 48-pin TSOP | BGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Access Time (tR) | [DATA_NEEDED: Access Time] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Jenis Ingatan | — | NAND Flash, MLC |
| Density | — | 64 Gbit (8 GB) |
| Organisasi | — | x8 I/O |
| Antaramuka | — | Asynchronous multiplexed NAND I/O |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |