M29DW323DB70N3E vs M29W320DT70N3E Perbandingan
Perbandingan bersamaan detil M29DW323DB70N3E dari Micron Technology dan M29W320DT70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29DW323DB70N3E | M29W320DT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | Flash - NOR | NOR Flash |
| Memory Format | FLASH | — |
| Technology | FLASH - NOR Memory IC | — |
| Density | 32 Mb (4M x 8, 2M x 16) | — |
| Memory Organization | 4M x 8 / 2M x 16 | — |
| Antarmuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 3 V class (per manufacturer datasheet) | — |
| Suhu Kerja | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Paket | 48-TSOP I | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Boot Block Location | Bottom (DB variant) | — |
| Byte/Word Organization Select | Yes (BYTE pin) | — |
| Applications Domain | Embedded code storage / XIP | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Standard Pack Quantity | [DATA_NEEDED: standard pack quantity] | — |
| Ukuran Memori | — | 32 Mbit |
| Organisasi | — | 4M x8 / 2M x16 |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Read Current (typical) | — | 10 mA |
| Boot Block Architecture | — | Top boot (DT suffix) |
| Boot Region | — | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block |
| Package Length | — | 18.4 mm |
| Level MSL | — | 3 (168 Hours) |
| Peak Reflow Temperature Time | — | 30 s |
| Packaging | — | Tray |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |