M29F800FT55N3E2 vs M29F800FB55M3E2 Perbandingan
Perbandingan bersamaan detil M29F800FT55N3E2 dari Micron Technology dan M29F800FB55M3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29F800FT55N3E2 | M29F800FB55M3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | Parallel NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 8 Mbit (8389 kbits) |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | — |
| Antarmuka | Parallel | — |
| Boot Block Architecture | Top Boot Block | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TSOP I | 44-pin SO (SOP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| Status RoHS | Compliant (E suffix = lead-free/RoHS) | Compliant (E suffix, RoHS-compliant package) |
| Organisasi | — | 512K x 16 / 1M x 8 |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block | — | Bottom boot block |
| Automotive Qualification | — | AEC-Q100 (Auto Grade 125C) |
| Program / Erase | — | Embedded byte/word program and erase controller |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Standard Packing | — | Tray |
| Family | — | M29F 200/400/800 5V Parallel NOR Flash |