M29W128GH70ZA3E vs M29W128GL70ZS3E Perbandingan
Perbandingan bersamaan detil M29W128GH70ZA3E dari Micron Technology dan M29W128GL70ZS3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29W128GH70ZA3E - 128Mbit Parallel NOR Flash, 70ns | Micron
M29W128GH70ZA3E ✓ AktifMicron Technology
M29W128GL70ZS3E - 128Mb 3V Parallel NOR Flash 70ns | Micron
M29W128GL70ZS3E ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29W128GH70ZA3E | M29W128GL70ZS3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash |
| Ukuran Memori | 128 Mbit | 128 Mbit (16 MB) |
| Organisasi | 8M x 16 | — |
| Antarmuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Technology | SLC NOR | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | 64-TBGA (10x13 mm) | 64-FBGA (11x13 mm) |
| Tegangan Pemuat | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V (3 V class) |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +125C (per distributor code data) |
| Boot Block Architecture | Bottom boot (GH suffix) | Bottom boot (GL) |
| Program/Erase Voltage | [DATA_NEEDED: program/erase voltage] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| CFI Compliant | [DATA_NEEDED: CFI compliance] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Family | — | M29W128G (GL variant) |
| Bus Width | — | x16 |
| Program/Erase Supply | — | Single supply (no separate VPP required) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Standby Current | — | [DATA_NEEDED: standby current] |