M29W128GH70ZA3E vs M29W128GL70ZS3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W128GH70ZA3E disebabkan oleh Micron Technology dan M29W128GL70ZS3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W128GH70ZA3E - 128Mbit Parallel NOR Flash, 70ns | Micron
M29W128GH70ZA3E ✓ AktifMicron Technology
M29W128GL70ZS3E - 128Mb 3V Parallel NOR Flash 70ns | Micron
M29W128GL70ZS3E ✓ AktifPengandingan Spesifikasi
| Parametr | M29W128GH70ZA3E | M29W128GL70ZS3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Saiz Ingatan | 128 Mbit | 128 Mbit (16 MB) |
| Organisasi | 8M x 16 | — |
| Antaramuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Technology | SLC NOR | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | 64-TBGA (10x13 mm) | 64-FBGA (11x13 mm) |
| Tegangan Pemberi Arus | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V (3 V class) |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +125C (per distributor code data) |
| Boot Block Architecture | Bottom boot (GH suffix) | Bottom boot (GL) |
| Program/Erase Voltage | [DATA_NEEDED: program/erase voltage] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| CFI Compliant | [DATA_NEEDED: CFI compliance] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Family | — | M29W128G (GL variant) |
| Bus Width | — | x16 |
| Program/Erase Supply | — | Single supply (no separate VPP required) |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Standby Current | — | [DATA_NEEDED: standby current] |