M321R4GA3EB2-CWM vs M321R4GA3EB0-CWM Perbandingan

Perbandingan bersamaan detil M321R4GA3EB2-CWM dari Samsung Electronics dan M321R4GA3EB0-CWM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
M321R4GA3EB2-CWM M321R4GA3EB2-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB2-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB2-CWM ✓ Aktif
Samsung Electronics
M321R4GA3EB0-CWM M321R4GA3EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB0-CWM ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M321R4GA3EB2-CWM M321R4GA3EB0-CWM
Merek Samsung Electronics Samsung Electronics
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $1.260,00 —
Memory Capacity 32 GB —
Tipe Memori DDR5 SDRAM ECC Registered (RDIMM) DDR5 SDRAM
Laju Data 5600 MT/s (PC5-44800) 5600 MT/s (PC5-44800)
Form Factor 288-pin RDIMM 288-pin DIMM
Organisasi 2Rx8 (dual rank, x8) 4Gx72
Operating Voltage 1.1 V 1.1 V
Latensi CAS CL46 CL46
DRAM Composition 20 x 2Gx8 FBGA DRAM components 20 x FBGA 2Gx8 DDR5 DRAM
Ranks 2 —
Error Correction On-die ECC (ODECC) + registered parity/CRC —
DRAM Die E-die (12nm-class process) —
JEDEC Compliance JEDEC PC5-44800R compliant —
Module Supply 12 V input with on-module PMIC (1.1 V DRAM rail) —
Compatible Platforms Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro DDR5 servers —
Status RoHS Compliant —
Suhu Kerja [DATA_NEEDED: operating temperature range] —
Peak Bandwidth Approx. 44.8 GB/s per module —
Capacity — 32 GB
Module Type — ECC Registered DIMM (RDIMM)
Rank Configuration — 2Rx8 (Dual Rank)
ECC — Yes (Registered with ECC)
Configuration — 1 x 32 GB
Bandwidth Class — PC5-44800 (44800 MB/s)
Application Segment — Server / Datacenter
Merek — Samsung Electronics
GTIN / EAN — 5715328154490

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