M321R4GA3EB2-CWM vs M321R4GA3EB0-CWM 比較
詳細並排比較 M321R4GA3EB2-CWM 由 Samsung Electronics 與 M321R4GA3EB0-CWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M321R4GA3EB2-CWM | M321R4GA3EB0-CWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $1,260.00 | — |
| Memory Capacity | 32 GB | — |
| 記憶體類型 | DDR5 SDRAM ECC Registered (RDIMM) | DDR5 SDRAM |
| 資料速率 | 5600 MT/s (PC5-44800) | 5600 MT/s (PC5-44800) |
| Form Factor | 288-pin RDIMM | 288-pin DIMM |
| 組織 | 2Rx8 (dual rank, x8) | 4Gx72 |
| Operating Voltage | 1.1 V | 1.1 V |
| CAS 延遲 | CL46 | CL46 |
| DRAM Composition | 20 x 2Gx8 FBGA DRAM components | 20 x FBGA 2Gx8 DDR5 DRAM |
| Ranks | 2 | — |
| Error Correction | On-die ECC (ODECC) + registered parity/CRC | — |
| DRAM Die | E-die (12nm-class process) | — |
| JEDEC Compliance | JEDEC PC5-44800R compliant | — |
| Module Supply | 12 V input with on-module PMIC (1.1 V DRAM rail) | — |
| Compatible Platforms | Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro DDR5 servers | — |
| RoHS 狀態 | Compliant | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| Peak Bandwidth | Approx. 44.8 GB/s per module | — |
| Capacity | — | 32 GB |
| Module Type | — | ECC Registered DIMM (RDIMM) |
| Rank Configuration | — | 2Rx8 (Dual Rank) |
| ECC | — | Yes (Registered with ECC) |
| Configuration | — | 1 x 32 GB |
| Bandwidth Class | — | PC5-44800 (44800 MB/s) |
| Application Segment | — | Server / Datacenter |
| 品牌 | — | Samsung Electronics |
| GTIN / EAN | — | 5715328154490 |