MPXHZ6115A6T1 vs MPXH6115AC6U Perbandingan
Perbandingan bersamaan detil MPXHZ6115A6T1 dari NXP Semiconductors dan MPXH6115AC6U dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MPXHZ6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP | 8-SOIC
MPXHZ6115A6T1 ✓ AktifNXP Semiconductors
MPXH6115AC6U - 15-115 kPa Absolute Pressure Sensor, 5V, 8-SOIC
MPXH6115AC6U ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MPXHZ6115A6T1 | MPXH6115AC6U |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) | 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa) |
| Maximum Overpressure | 400 kPa (58.02 PSI) | — |
| Tipe Output | Analog Voltage | Analog, ratiometric to VCC |
| Rentang Tegangan Output | 0.2 V to 4.7 V (at 5 V supply) | 0.2 V to 4.7 V (at 5 V supply) |
| Tegangan Pemuat | 5 V (typical, [DATA_NEEDED: full min/max range]) | 4.75 V to 5.25 V (5 V typical) |
| Accuracy | ±1.5% (0 °C to 85 °C) | — |
| Temperature Compensation Range | -40 °C to +125 °C | — |
| Rentang Suhu Kerja | -40 °C to +125 °C | -40 C to +125 C |
| Paket | 8-SOIC (0.295", 7.50 mm Width), Surface Mount | 8-SOIC (0.335 inch, 8.50 mm width) Top Port |
| Port Style | No Port (media-resistant PPS surface mount) | — |
| Sensor Technology | MEMS silicon strain-gauge with bipolar op-amp signal conditioning | — |
| Tipe Mounting | Surface Mount (PPS thermoplastic) | Surface Mount |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Media Compatibility | Media-resistant PPS package; dry gas media recommended | — |
| Sensitivity | — | 45.9 mV/kPa (typical) |
| Port Type | — | Male - 0.13 inch (3.3 mm) Tube, Top |
| Compensated Temperature Range | — | 0 C to +85 C |
| Signal Conditioning | — | On-chip bipolar op-amp + thin-film resistor network |
| Technology | — | Piezoresistive MEMS, monolithic silicon |
| Port Orientation | — | Top-side vertical |
| Level MSL | — | [DATA_NEEDED: MSL rating] |