MPXHZ6115A6T1 vs MPXH6115AC6U Karşılaştırma
Ayrıntılı yan yana karşılaştırma MPXHZ6115A6T1 tarafından NXP Semiconductors ve MPXH6115AC6U tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MPXHZ6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP | 8-SOIC
MPXHZ6115A6T1 ✓ AktifNXP Semiconductors
MPXH6115AC6U - 15-115 kPa Absolute Pressure Sensor, 5V, 8-SOIC
MPXH6115AC6U ✓ AktifÖzellik Karşılaştırması
| Parametre | MPXHZ6115A6T1 | MPXH6115AC6U |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) | 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa) |
| Maximum Overpressure | 400 kPa (58.02 PSI) | — |
| Çıkış Türü | Analog Voltage | Analog, ratiometric to VCC |
| Çıkış Gerilimi Aralığı | 0.2 V to 4.7 V (at 5 V supply) | 0.2 V to 4.7 V (at 5 V supply) |
| Besleme Gerilimi | 5 V (typical, [DATA_NEEDED: full min/max range]) | 4.75 V to 5.25 V (5 V typical) |
| Accuracy | ±1.5% (0 °C to 85 °C) | — |
| Temperature Compensation Range | -40 °C to +125 °C | — |
| İşletim Sıcaklığı Aralığı | -40 °C to +125 °C | -40 C to +125 C |
| Paket | 8-SOIC (0.295", 7.50 mm Width), Surface Mount | 8-SOIC (0.335 inch, 8.50 mm width) Top Port |
| Port Style | No Port (media-resistant PPS surface mount) | — |
| Sensor Technology | MEMS silicon strain-gauge with bipolar op-amp signal conditioning | — |
| Montaj Türü | Surface Mount (PPS thermoplastic) | Surface Mount |
| RoHS Durumu | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Media Compatibility | Media-resistant PPS package; dry gas media recommended | — |
| Sensitivity | — | 45.9 mV/kPa (typical) |
| Port Type | — | Male - 0.13 inch (3.3 mm) Tube, Top |
| Compensated Temperature Range | — | 0 C to +85 C |
| Signal Conditioning | — | On-chip bipolar op-amp + thin-film resistor network |
| Technology | — | Piezoresistive MEMS, monolithic silicon |
| Port Orientation | — | Top-side vertical |
| MSL Seviyesi | — | [DATA_NEEDED: MSL rating] |