MRF5S19060NBR1 vs MRF5S19060NR1 Perbandingan
Perbandingan bersamaan detil MRF5S19060NBR1 dari NXP Semiconductors dan MRF5S19060NR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRF5S19060NBR1 | MRF5S19060NR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | RF Transceivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Tipe Transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Dual Die (2 x N), Common Source | Single, Common-Source |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | 12 W |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | — |
| Power Gain | 14 dB at 1.99 GHz | — |
| Drain Current | 750 mA (typical operating DC) | — |
| Paket | TO-272 WB-4 (overmolded plastic) | — |
| Tipe Mounting | Surface Mount (SMD) | — |
| Jumlah Pin | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Level MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Typical Gain | — | 14 dB at 1.99 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 750 mA |
| Paket / Case | — | TO-270 WB-4 (over-molded plastic, 4-lead) |
| Gaya Mounting | — | Surface Mount |
| Application | — | Base station / broadband commercial amplifier |
| Jumlah Pin | — | 5 |
| Lead Free Status | — | Lead Free |
| Operating Mode | — | Class AB (typical RF PA) |