MRF5S19100HR5 vs MRF7S19100NR1 Perbandingan

Perbandingan bersamaan detil MRF5S19100HR5 dari NXP Semiconductors dan MRF7S19100NR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRF5S19100HR5 MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 Obsolete

Perbandingan Spesifikasi

Parameter Umum MRF5S19100HR5 MRF7S19100NR1
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Obsolete Aktif
Tipe Transistor LDMOS (RF Power) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology N-Channel MOSFET —
Frequency Band 1.93 GHz to 1.99 GHz —
Output Power (Pout) 22 W —
Power Gain at Test 13.9 dB —
Drain-Source Voltage Rated (Vdss) 65 V —
Test Voltage (Vd) 28 V —
Test Current (Id) 1 A —
Paket / Case NI-780 (3-pin ceramic flange) —
Supplier Device Package NI-780 —
Tipe Mounting Chassis Mount / Flange Surface Mount
Configuration Single N-Channel Single, Common Source
Part Status Obsolete —
Status RoHS [DATA_NEEDED: rohs status] [DATA_NEEDED: RoHS compliance per NXP product page]
Lead Finish [DATA_NEEDED: lead finish] —
ESD Protection Yes (per datasheet) —
Channel Temperature (Tj max) [DATA_NEEDED: junction temp absolute maximum] —
Frequency Range — 1930 MHz to 1990 MHz
Drain-Source Voltage (V(BR)DSS) min — 65 V
Drain Supply Voltage (VDD) typical — 28 V
Output Power (Pout) Avg W-CDMA — 29 W
Power Gain — 17.5 dB
Drain Current at Test (ID) — 1 A
Quiescent Current (IDQ) typical — 1000 mA to 1400 mA
Test Voltage — 28 V
Paket — TO-270 WB-4 (Case 1486-03) Plastic
Operating Mode — Class AB / Class C
Modulation Target — Single-Carrier W-CDMA (3GPP TM1 64 DPCH)
Level MSL — [DATA_NEEDED: MSL level per JEDEC J-STD-020]

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