MRF6S9160HR3 vs MRF6S9130HSR3 Perbandingan
Perbandingan bersamaan detil MRF6S9160HR3 dari NXP Semiconductors dan MRF6S9130HSR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MRF6S9160HR3 | MRF6S9130HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) | LDMOS (laterally diffused MOS) |
| Frequency Band | 880 MHz (single-band cellular UHF) | — |
| Operating Frequency Range | [DATA_NEEDED: full datasheet frequency range] | — |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: VDSS rating] | — |
| Supply Voltage (VDD) | 28 V (typical operation) | — |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) | — |
| Peak Output Power (Pout peak) | [DATA_NEEDED: peak Pout rating] | — |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) | — |
| Drain Efficiency (ηD) | [DATA_NEEDED: efficiency at rated Pout] | — |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) | — |
| Paket / Case | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged | NI-780S (CASE 465-06, Style 1) ceramic flange |
| Tipe Mounting | Chassis/Surface flange mount (screw-down) | Chassis / flange mount with screw-down |
| Configuration | Single (single-ended, common-source) | — |
| Operating Mode | Enhancement mode, Class AB | — |
| Test Signal | Single N-CDMA | — |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Status RoHS | unknown | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Tipe Transistor | — | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Operating Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency figure] |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Tj operating range] |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| Jumlah Pin | — | 3 |
| Style | — | Style 1 |
| Lead-Free | — | Yes |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |