MRF6S9160HR3 vs MRF6S9130HSR3 So sánh
So sánh chi tiết song song của MRF6S9160HR3 bằng NXP Semiconductors và MRF6S9130HSR3 bằng NXP Semiconductors. So sánh các thông số quan trọng, thông số điện tử, gói gọn, trạng thái vòng đời, giá cả và khả năng cung cấp để xác định linh kiện tốt nhất cho yêu cầu thiết kế của bạn.
NXP Semiconductors
MRF6S9160HR3 - 880MHz 35W RF Power MOSFET | NXP/Freescale
MRF6S9160HR3 ✓ Hoạt độngNXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ Hoạt độngSo sánh thông số kỹ thuật
| Tham số | MRF6S9160HR3 | MRF6S9130HSR3 |
|---|---|---|
| Thương hiệu | NXP Semiconductors | NXP Semiconductors |
| Danh mục | MOSFETs | MOSFETs |
| Trạng thái vòng đời | Hoạt động | Hoạt động |
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) | LDMOS (laterally diffused MOS) |
| Frequency Band | 880 MHz (single-band cellular UHF) | — |
| Operating Frequency Range | [DATA_NEEDED: full datasheet frequency range] | — |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: VDSS rating] | — |
| Supply Voltage (VDD) | 28 V (typical operation) | — |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) | — |
| Peak Output Power (Pout peak) | [DATA_NEEDED: peak Pout rating] | — |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) | — |
| Drain Efficiency (ηD) | [DATA_NEEDED: efficiency at rated Pout] | — |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) | — |
| Hộp / Vỏ | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged | NI-780S (CASE 465-06, Style 1) ceramic flange |
| Kiểu lắp đặt | Chassis/Surface flange mount (screw-down) | Chassis / flange mount with screw-down |
| Configuration | Single (single-ended, common-source) | — |
| Operating Mode | Enhancement mode, Class AB | — |
| Test Signal | Single N-CDMA | — |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Trạng thái RoHS | unknown | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Kiểu transitor | — | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Operating Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency figure] |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| Khoảng nhiệt độ hoạt động | — | [DATA_NEEDED: Tj operating range] |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| Số chân | — | 3 |
| Style | — | Style 1 |
| Lead-Free | — | Yes |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |