MRF6S9160HR3 vs MRF6S9130HSR3 موازنہ
تفصیلی ساتھ ساتھ موازنہ از MRF6S9160HR3 بذریعہ NXP Semiconductors اور MRF6S9130HSR3 بذریعہ NXP Semiconductors. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ فعالخصوصیات کا موازنہ
| پیرامیٹر | MRF6S9160HR3 | MRF6S9130HSR3 |
|---|---|---|
| برانڈ | NXP Semiconductors | NXP Semiconductors |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) | LDMOS (laterally diffused MOS) |
| Frequency Band | 880 MHz (single-band cellular UHF) | — |
| Operating Frequency Range | [DATA_NEEDED: full datasheet frequency range] | — |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: VDSS rating] | — |
| Supply Voltage (VDD) | 28 V (typical operation) | — |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) | — |
| Peak Output Power (Pout peak) | [DATA_NEEDED: peak Pout rating] | — |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) | — |
| Drain Efficiency (ηD) | [DATA_NEEDED: efficiency at rated Pout] | — |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) | — |
| پیکیج / کیس | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged | NI-780S (CASE 465-06, Style 1) ceramic flange |
| ماؤنٹنگ ٹائپ | Chassis/Surface flange mount (screw-down) | Chassis / flange mount with screw-down |
| Configuration | Single (single-ended, common-source) | — |
| Operating Mode | Enhancement mode, Class AB | — |
| Test Signal | Single N-CDMA | — |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| RoHS اسٹیٹس | unknown | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| ٹرانزسٹر کی قسم | — | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Operating Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency figure] |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| آپریٹنگ درجہ حرارت رینج | — | [DATA_NEEDED: Tj operating range] |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| پن کی تعداد | — | 3 |
| Style | — | Style 1 |
| Lead-Free | — | Yes |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |