MRF6S9160HR3 vs MRF6S9130HSR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S9160HR3 tarafından NXP Semiconductors ve MRF6S9130HSR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRF6S9160HR3 | MRF6S9130HSR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) | LDMOS (laterally diffused MOS) |
| Frequency Band | 880 MHz (single-band cellular UHF) | — |
| Operating Frequency Range | [DATA_NEEDED: full datasheet frequency range] | — |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: VDSS rating] | — |
| Supply Voltage (VDD) | 28 V (typical operation) | — |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) | — |
| Peak Output Power (Pout peak) | [DATA_NEEDED: peak Pout rating] | — |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) | — |
| Drain Efficiency (ηD) | [DATA_NEEDED: efficiency at rated Pout] | — |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) | — |
| Paket / Kas | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged | NI-780S (CASE 465-06, Style 1) ceramic flange |
| Montaj Türü | Chassis/Surface flange mount (screw-down) | Chassis / flange mount with screw-down |
| Configuration | Single (single-ended, common-source) | — |
| Operating Mode | Enhancement mode, Class AB | — |
| Test Signal | Single N-CDMA | — |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| RoHS Durumu | unknown | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Transistor Türü | — | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Operating Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency figure] |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| İşletim Sıcaklığı Aralığı | — | [DATA_NEEDED: Tj operating range] |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| Pin Sayısı | — | 3 |
| Style | — | Style 1 |
| Lead-Free | — | Yes |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |