MRF6V2300NR5 vs MRF6V2300NR1 Perbandingan
Perbandingan bersamaan detil MRF6V2300NR5 dari NXP Semiconductors dan MRF6V2300NR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRF6V2300NR5 | MRF6V2300NR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Tipe Transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) |
| Technology | Lateral Double-Diffused MOS (LDMOS) | Lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (Vdss) Rated | 110 V | — |
| Typical Operating Drain Voltage | 50 V | — |
| Frequency Range | 10 MHz to 600 MHz | — |
| Test Frequency | 220 MHz | 220 MHz |
| Typical Output Power (CW) | 300 W | — |
| Typical Power Gain | 25.5 dB at 220 MHz | — |
| Drain Current (Id) | 900 mA (DC bias) | — |
| Input Matching | Unmatched (external matching required) | Unmatched |
| Paket | TO-270 WB-4 (ceramic, air-cavity, bolt-down) | — |
| Tipe Mounting | Chassis / Heatsink Mount | Surface / flange-mount with screws |
| Operating Mode | CW large-signal / driver | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| Application | Industrial, medical, scientific RF power | — |
| Drain-Source Voltage (Vdss) | — | 110 V |
| Continuous Drain Current (Id) | — | 2.5 mA DC bias reference |
| Output Power (Pout) | — | 300 W CW |
| Power Gain | — | 25.5 dB |
| Operating Frequency Range | — | 10 MHz to 600 MHz |
| Drain Bias Voltage | — | 50 V |
| Mode of Operation | — | CW (continuous wave), Class AB |
| Package Type | — | TO-270 WB-4 (ceramic, flanged, single-ended) |
| Output Matching | — | Unmatched |
| Suhu Kerja | — | [DATA_NEEDED: junction/case temperature range] |