MRF8P9040NR1 vs MRF8S9120NR3 Perbandingan
Perbandingan bersamaan detil MRF8P9040NR1 dari NXP Semiconductors dan MRF8S9120NR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MRF8P9040NR1 | MRF8S9120NR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Tipe Transistor | N-Channel Lateral MOSFET (RF Power) | Lateral N-Channel MOSFET, Enhancement-Mode |
| Technology | HV8 Lateral N-Channel Enhancement-Mode | — |
| Operating Frequency Range | 728 MHz to 960 MHz | 865 MHz to 960 MHz (usable 700-1000 MHz) |
| Drain-Source Voltage (Vdss) Max | 70 V | — |
| Continuous Drain Current (Id) | 320 mA (per DigiKey listing) | — |
| Test Drain Supply Voltage | 28 V | — |
| Output Power (Pout) Avg | 4.0 W (CW / modulated at 28 V, 960 MHz) | — |
| Power Gain (Gps) at 960 MHz | 19.1 dB | — |
| Paket | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) | OM-780-2 (ceramic air-cavity, flange mount) |
| Tipe Mounting | Surface Mount / Flange Mount | Flange / chassis mount (through-hole RF package) |
| Jumlah Pin | 4 (Drain on flange) | — |
| Modulation Formats Supported | CDMA, W-CDMA, LTE | W-CDMA, LTE, GSM/EDGE, multi-carrier |
| PA Topology Suitability | Class AB, Class C | — |
| Level MSL | 3 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes (per typical NXP HV8 family) | — |
| Part Number | — | MRF8S9120NR3 |
| Application | — | W-CDMA / cellular base station RF power amplifier final stage |
| Drain Supply Voltage (VDD) | — | 28 V |
| Average Output Power | — | 33 W (W-CDMA, single-carrier) |
| Power Gain (typical) | — | 19.8 dB |
| Quiescent Drain Current (IDQ) | — | 800 mA typical |
| Operating Class | — | Class AB, Class C |
| Maximum Junction Temperature | — | [DATA_NEEDED: maximum junction temperature] |
| Lead Finish | — | Gold metallisation (typical for HV8 process) |