MRF8P9040NR1 vs MRF8S9120NR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P9040NR1 sa pamamagitan ng NXP Semiconductors at MRF8S9120NR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8P9040NR1 | MRF8S9120NR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Uri ng Transistor | N-Channel Lateral MOSFET (RF Power) | Lateral N-Channel MOSFET, Enhancement-Mode |
| Technology | HV8 Lateral N-Channel Enhancement-Mode | — |
| Operating Frequency Range | 728 MHz to 960 MHz | 865 MHz to 960 MHz (usable 700-1000 MHz) |
| Drain-Source Voltage (Vdss) Max | 70 V | — |
| Continuous Drain Current (Id) | 320 mA (per DigiKey listing) | — |
| Test Drain Supply Voltage | 28 V | — |
| Output Power (Pout) Avg | 4.0 W (CW / modulated at 28 V, 960 MHz) | — |
| Power Gain (Gps) at 960 MHz | 19.1 dB | — |
| Packhaging | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) | OM-780-2 (ceramic air-cavity, flange mount) |
| Uri ng Pagpapasok | Surface Mount / Flange Mount | Flange / chassis mount (through-hole RF package) |
| Bilang ng Pin | 4 (Drain on flange) | — |
| Modulation Formats Supported | CDMA, W-CDMA, LTE | W-CDMA, LTE, GSM/EDGE, multi-carrier |
| PA Topology Suitability | Class AB, Class C | — |
| Level ng MSL | 3 | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes (per typical NXP HV8 family) | — |
| Part Number | — | MRF8S9120NR3 |
| Application | — | W-CDMA / cellular base station RF power amplifier final stage |
| Drain Supply Voltage (VDD) | — | 28 V |
| Average Output Power | — | 33 W (W-CDMA, single-carrier) |
| Power Gain (typical) | — | 19.8 dB |
| Quiescent Drain Current (IDQ) | — | 800 mA typical |
| Operating Class | — | Class AB, Class C |
| Maximum Junction Temperature | — | [DATA_NEEDED: maximum junction temperature] |
| Lead Finish | — | Gold metallisation (typical for HV8 process) |