MRF8P9040NR1 vs MRF8S9120NR3 Comparaison
Comparaison détaillée côte à côte de MRF8P9040NR1 par NXP Semiconductors et MRF8S9120NR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF8P9040NR1 | MRF8S9120NR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Type de transistor | N-Channel Lateral MOSFET (RF Power) | Lateral N-Channel MOSFET, Enhancement-Mode |
| Technology | HV8 Lateral N-Channel Enhancement-Mode | — |
| Operating Frequency Range | 728 MHz to 960 MHz | 865 MHz to 960 MHz (usable 700-1000 MHz) |
| Drain-Source Voltage (Vdss) Max | 70 V | — |
| Continuous Drain Current (Id) | 320 mA (per DigiKey listing) | — |
| Test Drain Supply Voltage | 28 V | — |
| Output Power (Pout) Avg | 4.0 W (CW / modulated at 28 V, 960 MHz) | — |
| Power Gain (Gps) at 960 MHz | 19.1 dB | — |
| Boîtier | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) | OM-780-2 (ceramic air-cavity, flange mount) |
| Type de montage | Surface Mount / Flange Mount | Flange / chassis mount (through-hole RF package) |
| Nombre de broches | 4 (Drain on flange) | — |
| Modulation Formats Supported | CDMA, W-CDMA, LTE | W-CDMA, LTE, GSM/EDGE, multi-carrier |
| PA Topology Suitability | Class AB, Class C | — |
| Niveau MSL | 3 | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes (per typical NXP HV8 family) | — |
| Part Number | — | MRF8S9120NR3 |
| Application | — | W-CDMA / cellular base station RF power amplifier final stage |
| Drain Supply Voltage (VDD) | — | 28 V |
| Average Output Power | — | 33 W (W-CDMA, single-carrier) |
| Power Gain (typical) | — | 19.8 dB |
| Quiescent Drain Current (IDQ) | — | 800 mA typical |
| Operating Class | — | Class AB, Class C |
| Maximum Junction Temperature | — | [DATA_NEEDED: maximum junction temperature] |
| Lead Finish | — | Gold metallisation (typical for HV8 process) |