MRF8S9102NR3 vs MRF8S9202NR3 Perbandingan
Perbandingan bersamaan detil MRF8S9102NR3 dari NXP Semiconductors dan MRF8S9202NR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRF8S9102NR3 | MRF8S9202NR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF8S9102N / HV8 series | — |
| Tipe Transistor | N-Channel Lateral Enhancement-Mode MOSFET | N-Channel Lateral MOSFET |
| Application | RF Power Amplifier, W-CDMA base station | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 920 MHz | 920 MHz |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| Paket | OM-780-2 (3-pin ceramic, flange mount) | — |
| Tipe Mounting | Chassis / flange mount with bolt-down thermal pad | Surface Mount |
| Jumlah Pin | 3 | — |
| Status RoHS | [DATA_NEEDED: rohs compliance] | Compliant |
| Operating Mode | Class AB or Class C | Class AB and Class C |
| Part Status | — | Active |
| Configuration | — | Single |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (W-CDMA Average) | — | 58 W |
| Power Gain (typ) | — | 19 dB at 920 MHz |
| Drain Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 1300 mA |
| Drain Current (operating) | — | 1.3 A |
| Min Drain-Source Breakdown Voltage | — | 70 V |
| Paket / Case | — | OM-780-2 (ceramic air-cavity) |
| Modulation Support | — | Single W-CDMA, CDMA, GSM/EDGE |