MRF8S9102NR3 vs MRF8S9202NR3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF8S9102NR3 sa pamamagitan ng NXP Semiconductors at MRF8S9202NR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF8S9102NR3 MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 ✓ Nakahanda
NXP Semiconductors
MRF8S9202NR3 MRF8S9202NR3 - 58W 920-960MHz RF Power MOSFET | NXP

MRF8S9202NR3 - 58W 920-960MHz RF Power MOSFET | NXP

MRF8S9202NR3 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF8S9102NR3 MRF8S9202NR3
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Family MRF8S9102N / HV8 series —
Uri ng Transistor N-Channel Lateral Enhancement-Mode MOSFET N-Channel Lateral MOSFET
Application RF Power Amplifier, W-CDMA base station —
Operating Frequency Range 865 MHz to 960 MHz —
Test Frequency 920 MHz 920 MHz
Drain-Source Operating Voltage (VDS) 28 V (typical test condition) —
Drain-Source Breakdown Voltage (VDSS) 70 V (max) —
Average Output Power (POUT) 28 W —
Drain Current (ID) at bias 750 mA —
Power Gain (Gp) 23.1 dB —
Modulation Format Single W-CDMA (also Class AB/C capable) —
Packhaging OM-780-2 (3-pin ceramic, flange mount) —
Uri ng Pagpapasok Chassis / flange mount with bolt-down thermal pad Surface Mount
Bilang ng Pin 3 —
Tindminan RoHS [DATA_NEEDED: rohs compliance] Compliant
Operating Mode Class AB or Class C Class AB and Class C
Part Status — Active
Configuration — Single
Frequency Range — 920 MHz to 960 MHz
Output Power (W-CDMA Average) — 58 W
Power Gain (typ) — 19 dB at 920 MHz
Drain Supply Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 1300 mA
Drain Current (operating) — 1.3 A
Min Drain-Source Breakdown Voltage — 70 V
Packhaging / Kaso — OM-780-2 (ceramic air-cavity)
Modulation Support — Single W-CDMA, CDMA, GSM/EDGE

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