MRFE6S9200HR3 vs MRF6S19200HR5 Perbandingan
Perbandingan bersamaan detil MRFE6S9200HR3 dari NXP Semiconductors dan MRF6S19200HR5 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRFE6S9200HR3 | MRF6S19200HR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel LDMOS (RF Power) | LDMOS |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power MOSFET |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Paket | NI-880H-2L ceramic air-cavity | NI-780H-2L (ceramic flange) |
| Tipe Mounting | Chassis / flange mount, SMD variant 5.08 mm height | Flange / Screw Mount |
| Lead Free Status | Lead Free (per datasheet) | Yes |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | Class AB, Class C |
| Target Application | W-CDMA base-station final stage | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (Vds) Max | — | 66 V |
| Test Voltage (Vds) | — | 28 V |
| Test Current (Ids) | — | 1.6 A |
| Frequency Range | — | 1.93 GHz to 1.99 GHz |
| Power Gain (Typ) | — | 17.9 dB |
| Output Power (Pout) | — | 56 W (CW) |
| Application | — | CDMA base station, multicarrier amplifiers |
| Input Matching | — | Internal (broadband) |