MRFE6S9200HR3 vs MRF6S19200HR5 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRFE6S9200HR3 disebabkan oleh NXP Semiconductors dan MRF6S19200HR5 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRFE6S9200HR3 | MRF6S19200HR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel LDMOS (RF Power) | LDMOS |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power MOSFET |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Kemasan | NI-880H-2L ceramic air-cavity | NI-780H-2L (ceramic flange) |
| Jenis Pemasangan | Chassis / flange mount, SMD variant 5.08 mm height | Flange / Screw Mount |
| Lead Free Status | Lead Free (per datasheet) | Yes |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | Class AB, Class C |
| Target Application | W-CDMA base-station final stage | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (Vds) Max | — | 66 V |
| Test Voltage (Vds) | — | 28 V |
| Test Current (Ids) | — | 1.6 A |
| Frequency Range | — | 1.93 GHz to 1.99 GHz |
| Power Gain (Typ) | — | 17.9 dB |
| Output Power (Pout) | — | 56 W (CW) |
| Application | — | CDMA base station, multicarrier amplifiers |
| Input Matching | — | Internal (broadband) |