MRFE6S9200HR3 vs MRF6S19200HR5 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRFE6S9200HR3 tarafından NXP Semiconductors ve MRF6S19200HR5 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRFE6S9200HR3 | MRF6S19200HR5 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel LDMOS (RF Power) | LDMOS |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power MOSFET |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | — |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Paket | NI-880H-2L ceramic air-cavity | NI-780H-2L (ceramic flange) |
| Montaj Türü | Chassis / flange mount, SMD variant 5.08 mm height | Flange / Screw Mount |
| Lead Free Status | Lead Free (per datasheet) | Yes |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | Class AB, Class C |
| Target Application | W-CDMA base-station final stage | — |
| RoHS Durumu | Compliant | Compliant |
| Drain-Source Voltage (Vds) Max | — | 66 V |
| Test Voltage (Vds) | — | 28 V |
| Test Current (Ids) | — | 1.6 A |
| Frequency Range | — | 1.93 GHz to 1.99 GHz |
| Power Gain (Typ) | — | 17.9 dB |
| Output Power (Pout) | — | 56 W (CW) |
| Application | — | CDMA base station, multicarrier amplifiers |
| Input Matching | — | Internal (broadband) |