MT40A1G8AG-062E vs H5AN8G8NCJR-RDC Perbandingan
Perbandingan bersamaan detil MT40A1G8AG-062E dari Micron Technology dan H5AN8G8NCJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A1G8AG-062E | H5AN8G8NCJR-RDC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 1G x 8 | x8 |
| Antarmuka | Parallel | DDR4 (JEDEC standard) |
| Clock Frequency | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) | — |
| Clock Cycle Time | 19 ns class (-062E speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Paket | 78-FBGA (7.5 x 11 mm) | 78-ball FBGA |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Temperature Grade | Automotive (AUT) | — |
| Access Time (CAS Latency class) | DDR4-3200 timing class (tAA per datasheet) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| Termination | On-Die Termination (ODT) | — |
| CA Parity | Supported (DDR4 command/address parity) | — |
| Packaging Option | Tape and Reel (TR / :R suffix) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | — |
| Density | — | 8 Gb (1 GB) |
| Laju Data | — | up to 2666 Mbps |
| Tegangan Pemuat | — | 1.2 V (VDD) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Bebas Halogen | — | Yes |