MT40A2G8AG-062E vs H5ANAG8NCMR-VKI Perbandingan
Perbandingan bersamaan detil MT40A2G8AG-062E dari Micron Technology dan H5ANAG8NCMR-VKI dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A2G8AG-062E | H5ANAG8NCMR-VKI |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Organisasi | 2G x 8 | — |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| Latensi CAS | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | — |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| Paket | 78-FBGA (7.5 x 11 mm) | — |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Die Revision | AG (current generation) | — |
| Ukuran Memori | — | 16 Gb |
| Memory Organization | — | x8 |
| Laju Data | — | 2666 Mbps per pin |
| Technology | — | CMOS, volatile DRAM |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD] |
| Package Type | — | [DATA_NEEDED: package] |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency] |
| Refresh (tREFI) | — | [DATA_NEEDED: refresh interval] |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| Product Status | — | Active |
| Clocking | — | Differential clock (CK / CK#), fully synchronous |
| On-Die Termination | — | Yes (ODT) |