MT40A512M16TB-062E vs MT40A512M16HA-083E Perbandingan
Perbandingan bersamaan detil MT40A512M16TB-062E dari Micron Technology dan MT40A512M16HA-083E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A512M16TB-062E | MT40A512M16HA-083E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 512M x 16 | — |
| Laju Data | 1600 MHz (DDR4-3200) | 1.2 GHz data clock; DDR4-2400 class |
| Supply Voltage - VDD/VDDQ | 1.2V ±60mV | — |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV | — |
| tRCD | 19 ns | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| Rentang Suhu Kerja | 0°C to +95°C (standard), -40°C to +95°C (IT) | — |
| Paket | 96-FBGA (7.5x13 mm) | 96-ball FBGA, 9 x 14 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel | — |
| Fitur | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| Status RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| Memory Density | — | 8Gbit |
| Memory Organization | — | 512M x 16 |
| Data Interface | — | Parallel DDR4, 16-bit |
| VDD Supply | — | 1.2 V plus or minus 60 mV |
| VDDQ Supply | — | 1.2 V plus or minus 60 mV |
| VPP Supply | — | 2.5 V, -125 mV to +250 mV |
| I/O Interface | — | 1.2V pseudo open-drain |
| Tegangan Referensi | — | On-die internal adjustable VREFDQ |
| Refresh Cycle Count | — | 8192 cycles |
| Refresh Time, -40C to 85C | — | 64 ms |
| Refresh Time, >85C to 95C | — | 32 ms |
| Refresh Time, >95C | — | 16 ms |
| Ball Pitch | — | 0.8 mm |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |