MT41K64M16TW-107 vs K4B4G1646E-BYK000 Perbandingan
Perbandingan bersamaan detil MT41K64M16TW-107 dari Micron Technology dan K4B4G1646E-BYK000 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT41K64M16TW-107 - 1Gbit DDR3L SDRAM 1866MT/s | Micron Technology
MT41K64M16TW-107 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT41K64M16TW-107 | K4B4G1646E-BYK000 |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 1 Gbit | 4 Gbit |
| Organisasi | 64M x 16 | 256M x 16 |
| Antarmuka | Parallel | Parallel |
| Clock Frequency | 933 MHz | 800 MHz |
| Laju Data | 1866 MT/s (DDR3-1866 speed grade -107) | — |
| Access Time | 20 ns | 1.25 ns |
| Tegangan Pemuat | 1.35 V (1.283 V to 1.45 V) | — |
| Technology | CMOS DRAM | — |
| Suhu Kerja | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Paket | 96-FBGA (8 x 14 mm) | 96-FBGA (BYK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Refresh | Self refresh / auto refresh | — |
| Status RoHS | Compliant (lead-free, halogen-free suffix J) | [DATA_NEEDED: RoHS status] |
| Base Part Number | MT41K64M16 | — |
| Supply Voltage - DDR3 Compatible Mode | 1.5 V (refer to DDR3 datasheet specifications) | — |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Number of Banks | — | [DATA_NEEDED: bank count] |
| Die Process | — | Samsung E-die |
| Fitur | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |