W634GU6RB11I vs K4B4G1646E-BYMA Perbandingan
Perbandingan bersamaan detil W634GU6RB11I dari Winbond dan K4B4G1646E-BYMA dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | W634GU6RB11I | K4B4G1646E-BYMA |
|---|---|---|
| Merek | Winbond | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14,32 |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4Gbit (256M x 16) | — |
| Antarmuka | Parallel | — |
| Clock Frequency | 933 MHz | 933 MHz |
| Access Time | 20 ns | — |
| Tegangan Pemuat | 1.35V | 1.35 V (1.28 V to 1.575 V) |
| Paket | 96-VFBGA (7.5x13) | FBGA-96 |
| Suhu Kerja | -40°C to +95°C (Industrial) | 0°C to +95°C |
| Lebar Bus Data | 16 bit | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Bebas Halogen | Yes | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Latensi CAS | 11 (at 933 MHz) | [DATA_NEEDED: CAS Latency] |
| Refresh | Auto and Self Refresh | — |
| Density | — | 4 Gb |
| Laju Data | — | 1866 Mbps/pin |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| RoHS | — | Compliant |
| Burst Length | — | [DATA_NEEDED: Burst Length] |
| Jumlah Pin | — | 96 |