MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron
MPN: MT41K128M16JT ✓ AktifMT41K128M16JT Ringkasan
Alternatif penggantian untuk MT41K128M16JT — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian MT41K128M16JT (sama faktor bentuk dan footprint) — berbeda di dalam Mounting Type, Package, RoHS Status, Supply Voltage (VDD/VDDQ).
MT41K128M16JT-125 AAT:K
✅ Drop-In📋 Alternatif referensi (tidak dalam katalog)
MT41K128M16JT-125 AIT:K
✅ Drop-In📋 Alternatif referensi (tidak dalam katalog)
MT41K128M16JT-107 AAT:K
✅ Drop-In📋 Alternatif referensi (tidak dalam katalog)
MT41J128M16JT-125:K
✅ Drop-In📋 Alternatif referensi (tidak dalam katalog)
IS43TR16256AL-125KBLI-TR
✅ Drop-In✗ Habis Stok
$8.25 / Satuan
Lihat Datasheet →HGD32G16M16
✅ Drop-In📋 Alternatif referensi (tidak dalam katalog)
K4B2G1646F-BYMA
✅ Drop-In📋 Alternatif referensi (tidak dalam katalog)
MT41K128M16JT Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR3L SDRAM |
| Density | 2 Gbit |
| Organisasi | 128M x 16 |
| Banks | 8 banks |
| Prefetch Architecture | 8n-bit prefetch |
| Supply Voltage (VDD/VDDQ) | 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L) |
| Access Time | 0.225 ns (CK to DQ, -125 bin) |
| Cycle Time | 1.25 ns (-125 bin) / 1.07 ns (-107 bin) |
| Max Data Rate | 1600 MT/s (-125) / 1866 MT/s (-107) |
| Suhu Kerja | 0C to +95C (commercial, no suffix) |
| Industrial Temperature Option | -40C to +95C (IT suffix) |
| Automotive Temperature Option | -40C to +105C (AAT) / -40C to +95C (AIT) |
| Paket | 96-FBGA (8 mm x 14 mm, 0.8 mm pitch) |
| Process Technology | CMOS |
| On-Die Termination | Dynamic ODT (nominal/weak/strong) |
| Calibration | ZQ calibration (240 ohm ext. resistor) |
| Refresh | Auto self-refresh (ASR) |
| Write Feature | Write leveling + data mask |
| Tipe Mounting | Surface Mount (FBGA) |
| Status RoHS | Compliant (Pb-free FBGA) |
Konfigurasi Pin MT41K128M16JT
| Pin produk A1 | VDD — 1.35 V core supply |
| Pin produk A2 | DQ0 — Data I/O bit 0 |
| Pin produk A3 | DQ1 — Data I/O bit 1 |
| Pin produk A7 | DQ2 — Data I/O bit 2 |
| Pin produk A8 | DQ3 — Data I/O bit 3 |
| Pin produk A9 | VDDQ — 1.35 V DQ supply |
| Pin produk B1 | VSS — Ground |
| Pin produk B9 | VSSQ — DQ ground |
| Pin produk C1 | VDD — 1.35 V core supply |
| Pin produk C9 | DQ4 — Data I/O bit 4 |
| Pin produk D1 | VSS — Ground |
| Pin produk D2 | A0 — Address bit 0 |
| Pin produk D3 | A1 — Address bit 1 |
| Pin produk D7 | A2 — Address bit 2 |
| Pin produk D8 | A3 — Address bit 3 |
| Pin produk D9 | VSSQ — DQ ground |
| Pin produk E1 | VDD — 1.35 V core supply |
| Pin produk E3 | A4 — Address bit 4 |
| Pin produk E7 | A5 — Address bit 5 |
| Pin produk E9 | DQ5 — Data I/O bit 5 |
| Pin produk F1 | VSS — Ground |
| Pin produk F2 | RAS — Row Address Strobe |
| Pin produk F3 | A6 — Address bit 6 |
| Pin produk F7 | A7 — Address bit 7 |
| Pin produk F8 | A8 — Address bit 8 |
| Pin produk F9 | VSSQ — DQ ground |
| Pin produk G1 | VDD — 1.35 V core supply |
| Pin produk G2 | CAS — Column Address Strobe |
| Pin produk G3 | WE — Write Enable |
| Pin produk G7 | A9 — Address bit 9 |
| Pin produk G8 | A10/AP — Address bit 10 / Auto-Precharge |
| Pin produk G9 | DQ6 — Data I/O bit 6 |
| Pin produk H1 | VSS — Ground |
| Pin produk H2 | BA0 — Bank Address 0 |
| Pin produk H3 | BA1 — Bank Address 1 |
| Pin produk H7 | A11 — Address bit 11 |
| Pin produk H8 | A12 — Address bit 12 |
| Pin produk H9 | DQ7 — Data I/O bit 7 |
| Pin produk J1 | VDD — 1.35 V core supply |
| Pin produk J2 | CS — Chip Select |
| Pin produk J3 | CK — Clock (positive) |
| Pin produk J7 | CKE — Clock Enable |
| Pin produk J8 | ODT — On-Die Termination |
| Pin produk J9 | DQ8 — Data I/O bit 8 |
| Pin produk K1 | VSS — Ground |
| Pin produk K2 | CK — Clock (negative) |
| Pin produk K3 | RESET — Asynchronous reset |
| Pin produk K7 | DM0 — Data Mask for DQ[7:0] |
| Pin produk K8 | VSSQ — DQ ground |
| Pin produk K9 | DQ9 — Data I/O bit 9 |
| Pin produk L1 | VDDQ — 1.35 V DQ supply |
| Pin produk L2 | ZQ — ZQ calibration (240 ohm ref) |
| Pin produk L3 | A13 — Address bit 13 |
| Pin produk L7 | DM1 — Data Mask for DQ[15:8] |
| Pin produk L8 | VSSQ — DQ ground |
| Pin produk L9 | DQ10 — Data I/O bit 10 |
| Pin produk M1 | VSS — Ground |
| Pin produk M2 | VDD — 1.35 V core supply |
| Pin produk M3 | NC — Not connected (per datasheet) |
| Pin produk M7 | DQ11 — Data I/O bit 11 |
| Pin produk M8 | DQ12 — Data I/O bit 12 |
| Pin produk M9 | VSSQ — DQ ground |
| Pin produk N1 | VDDQ — 1.35 V DQ supply |
| Pin produk N2 | VSSQ — DQ ground |
| Pin produk N3 | NC — Not connected (per datasheet) |
| Pin produk N7 | DQ13 — Data I/O bit 13 |
| Pin produk N8 | DQ14 — Data I/O bit 14 |
| Pin produk N9 | VSSQ — DQ ground |
| Pin produk P1 | VSS — Ground |
| Pin produk P2 | VDD — 1.35 V core supply |
| Pin produk P3 | VSSQ — DQ ground |
| Pin produk P7 | VSSQ — DQ ground |
| Pin produk P8 | DQ15 — Data I/O bit 15 |
| Pin produk P9 | VSSQ — DQ ground |
| Pin produk R1 | VDDQ — 1.35 V DQ supply |
| Pin produk R2 | VSS — Ground |
| Pin produk R3 | NC — Not connected (per datasheet) |
| Pin produk R7 | NC — Not connected (per datasheet) |
| Pin produk R8 | VSS — Ground |
| Pin produk R9 | VSSQ — DQ ground |
| Pin produk T1 | VSS — Ground |
| Pin produk T2 | VDD — 1.35 V core supply |
| Pin produk T3 | A14 — Address bit 14 (per datasheet) |
| Pin produk T7 | A16 — Address bit 16 (per datasheet) |
| Pin produk T8 | VSS — Ground |
| Pin produk T9 | VSSQ — DQ ground |
| Pin produk U1 | VDDQ — 1.35 V DQ supply |
| Pin produk U2 | VSSQ — DQ ground |
| Pin produk U3 | NC — Not connected (per datasheet) |
| Pin produk U7 | NC — Not connected (per datasheet) |
| Pin produk U8 | VSSQ — DQ ground |
| Pin produk U9 | VSSQ — DQ ground |
| Pin produk V1 | VSS — Ground |
| Pin produk V2 | VDD — 1.35 V core supply |
| Pin produk V3 | NC — Not connected (per datasheet) |
| Pin produk V7 | A15 — Address bit 15 (per datasheet) |
| Pin produk V8 | NC — Not connected (per datasheet) |
| Pin produk V9 | VSS — Ground |
| Pin produk W1 | VDDQ — 1.35 V DQ supply |
| Pin produk W2 | VSSQ — DQ ground |
| Pin produk W3 | NC — Not connected (per datasheet) |
| Pin produk W7 | VSSQ — DQ ground |
| Pin produk W8 | VSS — Ground |
| Pin produk W9 | VSSQ — DQ ground |
| Pin produk Y1 | VSS — Ground |
| Pin produk Y3 | NC — Not connected (per datasheet) |
| Pin produk Y7 | NC — Not connected (per datasheet) |
| Pin produk Y9 | VSSQ — DQ ground |
Aplikasi Umum
MT41K128M16JT cocok untuk 7 aplikasis: Networking Routers and Switches, Embedded Industrial PCs (SBCs), Automotive Infotainment and Telematics, Set-Top Boxes and Media Gateways, Industrial Automation and PLCs, Printers and Imaging MFPs, IoT Edge Gateways and Smart Hubs.
Networking Routers and Switches
The MT41K128M16JT-125 IT:K fits networking routers and switches because the 2 Gbit (256 MB) density matches typical packet-buffer and routing-table working sets in mid-range enterprise switches, while the DDR3L 1.35 V supply reduces idle power by 15-20% versus DDR3 in always-on 24/7 deployments. The 1600 MT/s -125 speed bin provides sufficient bandwidth for IPv4/IPv6 forwarding at multi-Gigabit line rates. Dynamic ODT eliminates external termination resistors, simplifying the fly-by command/address routing demanded by switch PCB stack-ups. Pair the memory with a Broadcom BCM5xxx switch ASIC or a Microchip PolarFire SoC for a complete reference design.
Direkomendasikan
Embedded Industrial PCs (SBCs)
Single-board computers based on NXP i.MX8 or Intel Atom benefit from the MT41K128M16JT-107 IT:K because the 1866 MT/s -107 speed bin keeps up with high-resolution HMI frame buffers, while the 256 MB density suits headless industrial controllers running deterministic Linux or RTOS workloads. The industrial temperature option -40C to +95C handles factory-floor cold-start and elevated rack temperatures. The 96-FBGA JT footprint is the industry-standard pinout for second-source DDR3L memory on x86 SBCs and ARM SoMs, simplifying the BoM with multiple approved suppliers.
Direkomendasikan
Automotive Infotainment and Telematics
The MT41K128M16JT-125 AAT:K is qualified to the AEC-Q100 automotive -40C to +105C temperature grade and provides 256 MB of DDR3L memory for IVI head units, digital instrument clusters, and telematics control units. The 1.35 V DDR3L supply reduces vehicle battery drain during key-off telematics standby, an increasingly important metric for electric vehicles. Dynamic ODT and ZQ calibration keep signal integrity robust across the wide automotive temperature range. Pair the memory with an NXP i.MX8 or Renesas R-Car SoC for an automotive infotainment reference design.
Direkomendasikan
Set-Top Boxes and Media Gateways
Set-top boxes and media gateways use the MT41K128M16JT-125:K because 256 MB is sufficient for Linux-based middleware, video-decode scratch buffers, and network-protocol stacks while staying within cost-sensitive consumer BoM targets. The 1600 MT/s -125 speed bin supports H.264/H.265 decode at 1080p60 without bottleneck. DDR3L 1.35 V keeps power dissipation low in sealed enclosures with limited thermal headroom. The 96-FBGA JT ball map is the de-facto second-source footprint, enabling Micron/Samsung/ISSI multi-sourcing.
Direkomendasikan
Industrial Automation and PLCs
PLC and industrial automation controllers use the MT41K128M16JT-125 IT:K because the 256 MB DDR3L density comfortably holds deterministic-logic scan tables, recipe storage buffers, and HMI frame buffers in mid-size PLC racks. The industrial -40C to +95C temperature range handles cold-start in unheated cabinets and elevated temperatures in sealed enclosures. Dynamic ODT and ZQ calibration give robust signal integrity over long backplane traces typical of modular I/O racks. Pair with a TI Sitara AM64x or Renesas RZ/N2 for an industrial reference design.
Direkomendasikan
Printers and Imaging MFPs
Multi-function printers and imaging systems benefit from the MT41K128M16JT-125:K because 256 MB of DDR3L buffers full-resolution scan images, page-description-language (PDL) interpreters, and queued print-job storage without requiring an expensive SSD. The DDR3L 1.35 V supply lowers idle power on EnergyStar and Blue Angel compliant products. The 96-FBGA JT footprint is compatible with the printer SoC ecosystem (e.g., Marvell 88PA62, Broadcom BCM series). Pair the memory with a USB 3.0 hub and a Wi-Fi 6 module for a connected-MFP reference design.
Direkomendasikan
IoT Edge Gateways and Smart Hubs
IoT edge gateways and smart-home hubs use the MT41K128M16JT-125:K because 256 MB of DDR3L is enough for Zigbee/Z-Wave/Thread mesh stacks, local MQTT brokers, and small ML inference buffers while keeping the BoM cost in the under-$50 retail range. The DDR3L 1.35 V supply enables battery-backed or PoE-powered deployments without aggressive thermal design. The 96-FBGA JT package is the standard footprint for IoT SoCs (e.g., NXP i.MX RT, Realtek Ameba, ESP-S3) enabling multi-vendor second-sourcing. Pair with a sub-GHz radio and a Wi-Fi 6 module for a complete gateway reference.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk MT41K128M16JT — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | MT41K128M16JT-125 AAT:K | MT41K128M16JT-125 AIT:K | MT41K128M16JT-107 AAT:K | MT41J128M16JT-125:K | IS43TR16256AL-125KBLI | HGD32G16M16 | K4B2G1646F-BYMA |
|---|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | ISSI | HGCHIPS | Samsung Electronics |
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same |
| Density | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) |
| Supply Voltage | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.5 V (DDR3) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) |
| Max Data Rate | 1600 MT/s (-125 bin) | 1600 MT/s | 1600 MT/s | 1866 MT/s (+17%) | 1600 MT/s | 1600 MT/s | 1600 MT/s | 1600 MT/s |
| Dynamic ODT | Yes (nominal/weak/strong) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| ZQ Calibration | Yes (240 ohm ref) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Write Leveling | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Diferensiator Kunci
- Wide temperature-grade portfolio in same JT footprint (vsIS43TR16256AL-125KBLI)
- DDR3L 1.35 V supply reduces power by 15-20% vs DDR3 (vsMT41J128M16JT-125:K)
- Higher speed bin available (-107, 1866 MT/s) (vsIS43TR16256AL-125KBLI)
Catatan Desain
Estimated: The 96-FBGA at 0.8 mm pitch requires a 4-layer PCB minimum with controlled-impedance routing (50 ohm +/- 10% single-ended for DQ, 100 ohm +/- 10% differential for CK/CK#). Use microvia stack-up (laser-drilled 0.1 mm vias at the BGA breakout) on a 0.8-1.0 mm dielectric core to maintain signal integrity on the fly-by command/address bus. A 240 ohm +/- 1% precision resistor must be tied between ZQ and VSSQ for impedance calibration - tolerance directly impacts ODT accuracy.
Estimated: VDD/VDDQ must be derived from a switching regulator or high-current LDO capable of at least 400 mA peak current with +/- 3% tolerance during read/write bursts. A 100 nF + 10 uF + 100 uF decoupling network is required on each supply pin per Micron's standard DDR3L decoupling recommendation. Place the smallest capacitor closest to each ball, and ensure the VDDQ and VSSQ planes are tied with multiple stitched vias to minimize return-path impedance for the 1600 MT/s -125 or 1866 MT/s -107 data signals.
DDR3 fly-by routing on command/address/control signals is mandatory. Place the memory device on the same side of the PCB as the memory controller with trace lengths tuned such that the CK/CK# pair arrives at each DRAM device within +/- 25 ps of the nominal delay. Use write-leveling during controller initialization to compensate for propagation skew. For point-to-point DQ routing between the controller and a single DRAM, length-match within +/- 50 ps across the full byte lane (DQ0-7 or DQ8-15).
DDR3L SDRAM at 1600 MT/s draws approximately 150 mW active and 10 mW self-refresh. The 96-FBGA package has no exposed thermal pad - heat exits primarily through the BGA balls to the PCB inner planes. For full-temperature industrial -40C to +95C operation, ensure the PCB top-side ground plane beneath the BGA has stitched thermal vias to the inner planes. Junction temperature must remain below 95C in commercial and 105C in automotive variants to meet the datasheet AC timing.
Do not mix DDR3 (MT41J, 1.5 V) and DDR3L (MT41K, 1.35 V) parts on the same memory channel: the VDDQ levels are different and the ODT impedance targets differ. Do not omit the ZQ resistor - dynamic ODT requires calibration at every power-up and at periodic refresh intervals. Do not exceed 1.45 V on VDDQ under any condition including transient spikes: the device's thin-oxide core will be damaged. Finally, the RESET pin (ball K3) must be held low during power-rail ramp-up for at least 200 us to ensure proper initialization.
Informasi Konformitas
RoHS compliant per Micron datasheet (Pb-free FBGA). AEC-Q100 qualified for the AAT/AIT variants only - the K (commercial) and IT (industrial) variants are not automotive-grade. Reach SVHC compliant per Micron product declaration. Halogen-free per JEDEC JS709B.
