MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron
N.º da peça: MT41K128M16JT ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $13.95 | $13,95 |
| 10 | $13.43 | $134,30 |
| 100 | $11.95 | $1.195,00 |
| 500 | $10.5 | $5.250,00 |
| 1.000 | $9.2 | $9.200,00 |
MT41K128M16JT Visão geral
Alternativas drop-in para MT41K128M16JT — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MT41K128M16JT (mesmo formato e footprint) — diferindo em Mounting Type, Package, RoHS Status, Supply Voltage (VDD/VDDQ).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MT41K128M16JT-125 AAT:K
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT41K128M16JT-125 AIT:K
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT41K128M16JT-107 AAT:K
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT41J128M16JT-125:K
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IS43TR16256AL-125KBLI-TR
✅ Drop-In✓ Em estoque
$8.25 / unidade
Ver ficha técnica →HGD32G16M16
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K4B2G1646F-BYMA
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT41K128M16JT Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 2 Gbit |
| Organização da memória | 128M x 16 |
| Banks | 8 banks |
| Prefetch Architecture | 8n-bit prefetch |
| Supply Voltage (VDD/VDDQ) | 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L) |
| Access Time | 0.225 ns (CK to DQ, -125 bin) |
| Cycle Time | 1.25 ns (-125 bin) / 1.07 ns (-107 bin) |
| Max Data Rate | 1600 MT/s (-125) / 1866 MT/s (-107) |
| Temperatura de operação | 0C to +95C (commercial, no suffix) |
| Industrial Temperature Option | -40C to +95C (IT suffix) |
| Automotive Temperature Option | -40C to +105C (AAT) / -40C to +95C (AIT) |
| Encapsulamento | 96-FBGA (8 mm x 14 mm, 0.8 mm pitch) |
| Process Technology | CMOS |
| On-Die Termination | Dynamic ODT (nominal/weak/strong) |
| Calibration | ZQ calibration (240 ohm ext. resistor) |
| Refresh | Auto self-refresh (ASR) |
| Write Feature | Write leveling + data mask |
| Tipo de montagem | Surface Mount (FBGA) |
| Status RoHS | Compliant (Pb-free FBGA) |
Configuração de pinos do MT41K128M16JT
| Pino A1 | VDD — 1.35 V core supply |
| Pino A2 | DQ0 — Data I/O bit 0 |
| Pino A3 | DQ1 — Data I/O bit 1 |
| Pino A7 | DQ2 — Data I/O bit 2 |
| Pino A8 | DQ3 — Data I/O bit 3 |
| Pino A9 | VDDQ — 1.35 V DQ supply |
| Pino B1 | VSS — Ground |
| Pino B9 | VSSQ — DQ ground |
| Pino C1 | VDD — 1.35 V core supply |
| Pino C9 | DQ4 — Data I/O bit 4 |
| Pino D1 | VSS — Ground |
| Pino D2 | A0 — Address bit 0 |
| Pino D3 | A1 — Address bit 1 |
| Pino D7 | A2 — Address bit 2 |
| Pino D8 | A3 — Address bit 3 |
| Pino D9 | VSSQ — DQ ground |
| Pino E1 | VDD — 1.35 V core supply |
| Pino E3 | A4 — Address bit 4 |
| Pino E7 | A5 — Address bit 5 |
| Pino E9 | DQ5 — Data I/O bit 5 |
| Pino F1 | VSS — Ground |
| Pino F2 | RAS — Row Address Strobe |
| Pino F3 | A6 — Address bit 6 |
| Pino F7 | A7 — Address bit 7 |
| Pino F8 | A8 — Address bit 8 |
| Pino F9 | VSSQ — DQ ground |
| Pino G1 | VDD — 1.35 V core supply |
| Pino G2 | CAS — Column Address Strobe |
| Pino G3 | WE — Write Enable |
| Pino G7 | A9 — Address bit 9 |
| Pino G8 | A10/AP — Address bit 10 / Auto-Precharge |
| Pino G9 | DQ6 — Data I/O bit 6 |
| Pino H1 | VSS — Ground |
| Pino H2 | BA0 — Bank Address 0 |
| Pino H3 | BA1 — Bank Address 1 |
| Pino H7 | A11 — Address bit 11 |
| Pino H8 | A12 — Address bit 12 |
| Pino H9 | DQ7 — Data I/O bit 7 |
| Pino J1 | VDD — 1.35 V core supply |
| Pino J2 | CS — Chip Select |
| Pino J3 | CK — Clock (positive) |
| Pino J7 | CKE — Clock Enable |
| Pino J8 | ODT — On-Die Termination |
| Pino J9 | DQ8 — Data I/O bit 8 |
| Pino K1 | VSS — Ground |
| Pino K2 | CK — Clock (negative) |
| Pino K3 | RESET — Asynchronous reset |
| Pino K7 | DM0 — Data Mask for DQ[7:0] |
| Pino K8 | VSSQ — DQ ground |
| Pino K9 | DQ9 — Data I/O bit 9 |
| Pino L1 | VDDQ — 1.35 V DQ supply |
| Pino L2 | ZQ — ZQ calibration (240 ohm ref) |
| Pino L3 | A13 — Address bit 13 |
| Pino L7 | DM1 — Data Mask for DQ[15:8] |
| Pino L8 | VSSQ — DQ ground |
| Pino L9 | DQ10 — Data I/O bit 10 |
| Pino M1 | VSS — Ground |
| Pino M2 | VDD — 1.35 V core supply |
| Pino M3 | NC — Not connected (per datasheet) |
| Pino M7 | DQ11 — Data I/O bit 11 |
| Pino M8 | DQ12 — Data I/O bit 12 |
| Pino M9 | VSSQ — DQ ground |
| Pino N1 | VDDQ — 1.35 V DQ supply |
| Pino N2 | VSSQ — DQ ground |
| Pino N3 | NC — Not connected (per datasheet) |
| Pino N7 | DQ13 — Data I/O bit 13 |
| Pino N8 | DQ14 — Data I/O bit 14 |
| Pino N9 | VSSQ — DQ ground |
| Pino P1 | VSS — Ground |
| Pino P2 | VDD — 1.35 V core supply |
| Pino P3 | VSSQ — DQ ground |
| Pino P7 | VSSQ — DQ ground |
| Pino P8 | DQ15 — Data I/O bit 15 |
| Pino P9 | VSSQ — DQ ground |
| Pino R1 | VDDQ — 1.35 V DQ supply |
| Pino R2 | VSS — Ground |
| Pino R3 | NC — Not connected (per datasheet) |
| Pino R7 | NC — Not connected (per datasheet) |
| Pino R8 | VSS — Ground |
| Pino R9 | VSSQ — DQ ground |
| Pino T1 | VSS — Ground |
| Pino T2 | VDD — 1.35 V core supply |
| Pino T3 | A14 — Address bit 14 (per datasheet) |
| Pino T7 | A16 — Address bit 16 (per datasheet) |
| Pino T8 | VSS — Ground |
| Pino T9 | VSSQ — DQ ground |
| Pino U1 | VDDQ — 1.35 V DQ supply |
| Pino U2 | VSSQ — DQ ground |
| Pino U3 | NC — Not connected (per datasheet) |
| Pino U7 | NC — Not connected (per datasheet) |
| Pino U8 | VSSQ — DQ ground |
| Pino U9 | VSSQ — DQ ground |
| Pino V1 | VSS — Ground |
| Pino V2 | VDD — 1.35 V core supply |
| Pino V3 | NC — Not connected (per datasheet) |
| Pino V7 | A15 — Address bit 15 (per datasheet) |
| Pino V8 | NC — Not connected (per datasheet) |
| Pino V9 | VSS — Ground |
| Pino W1 | VDDQ — 1.35 V DQ supply |
| Pino W2 | VSSQ — DQ ground |
| Pino W3 | NC — Not connected (per datasheet) |
| Pino W7 | VSSQ — DQ ground |
| Pino W8 | VSS — Ground |
| Pino W9 | VSSQ — DQ ground |
| Pino Y1 | VSS — Ground |
| Pino Y3 | NC — Not connected (per datasheet) |
| Pino Y7 | NC — Not connected (per datasheet) |
| Pino Y9 | VSSQ — DQ ground |
Aplicações típicas
MT41K128M16JT é adequado para 7 aplicaçãos: Networking Routers and Switches, Embedded Industrial PCs (SBCs), Automotive Infotainment and Telematics, Set-Top Boxes and Media Gateways, Industrial Automation and PLCs, Printers and Imaging MFPs, IoT Edge Gateways and Smart Hubs.
Networking Routers and Switches
The MT41K128M16JT-125 IT:K fits networking routers and switches because the 2 Gbit (256 MB) density matches typical packet-buffer and routing-table working sets in mid-range enterprise switches, while the DDR3L 1.35 V supply reduces idle power by 15-20% versus DDR3 in always-on 24/7 deployments. The 1600 MT/s -125 speed bin provides sufficient bandwidth for IPv4/IPv6 forwarding at multi-Gigabit line rates. Dynamic ODT eliminates external termination resistors, simplifying the fly-by command/address routing demanded by switch PCB stack-ups. Pair the memory with a Broadcom BCM5xxx switch ASIC or a Microchip PolarFire SoC for a complete reference design.
Recomendado
Embedded Industrial PCs (SBCs)
Single-board computers based on NXP i.MX8 or Intel Atom benefit from the MT41K128M16JT-107 IT:K because the 1866 MT/s -107 speed bin keeps up with high-resolution HMI frame buffers, while the 256 MB density suits headless industrial controllers running deterministic Linux or RTOS workloads. The industrial temperature option -40C to +95C handles factory-floor cold-start and elevated rack temperatures. The 96-FBGA JT footprint is the industry-standard pinout for second-source DDR3L memory on x86 SBCs and ARM SoMs, simplifying the BoM with multiple approved suppliers.
Recomendado
Automotive Infotainment and Telematics
The MT41K128M16JT-125 AAT:K is qualified to the AEC-Q100 automotive -40C to +105C temperature grade and provides 256 MB of DDR3L memory for IVI head units, digital instrument clusters, and telematics control units. The 1.35 V DDR3L supply reduces vehicle battery drain during key-off telematics standby, an increasingly important metric for electric vehicles. Dynamic ODT and ZQ calibration keep signal integrity robust across the wide automotive temperature range. Pair the memory with an NXP i.MX8 or Renesas R-Car SoC for an automotive infotainment reference design.
Recomendado
Set-Top Boxes and Media Gateways
Set-top boxes and media gateways use the MT41K128M16JT-125:K because 256 MB is sufficient for Linux-based middleware, video-decode scratch buffers, and network-protocol stacks while staying within cost-sensitive consumer BoM targets. The 1600 MT/s -125 speed bin supports H.264/H.265 decode at 1080p60 without bottleneck. DDR3L 1.35 V keeps power dissipation low in sealed enclosures with limited thermal headroom. The 96-FBGA JT ball map is the de-facto second-source footprint, enabling Micron/Samsung/ISSI multi-sourcing.
Recomendado
Industrial Automation and PLCs
PLC and industrial automation controllers use the MT41K128M16JT-125 IT:K because the 256 MB DDR3L density comfortably holds deterministic-logic scan tables, recipe storage buffers, and HMI frame buffers in mid-size PLC racks. The industrial -40C to +95C temperature range handles cold-start in unheated cabinets and elevated temperatures in sealed enclosures. Dynamic ODT and ZQ calibration give robust signal integrity over long backplane traces typical of modular I/O racks. Pair with a TI Sitara AM64x or Renesas RZ/N2 for an industrial reference design.
Recomendado
Printers and Imaging MFPs
Multi-function printers and imaging systems benefit from the MT41K128M16JT-125:K because 256 MB of DDR3L buffers full-resolution scan images, page-description-language (PDL) interpreters, and queued print-job storage without requiring an expensive SSD. The DDR3L 1.35 V supply lowers idle power on EnergyStar and Blue Angel compliant products. The 96-FBGA JT footprint is compatible with the printer SoC ecosystem (e.g., Marvell 88PA62, Broadcom BCM series). Pair the memory with a USB 3.0 hub and a Wi-Fi 6 module for a connected-MFP reference design.
Recomendado
IoT Edge Gateways and Smart Hubs
IoT edge gateways and smart-home hubs use the MT41K128M16JT-125:K because 256 MB of DDR3L is enough for Zigbee/Z-Wave/Thread mesh stacks, local MQTT brokers, and small ML inference buffers while keeping the BoM cost in the under-$50 retail range. The DDR3L 1.35 V supply enables battery-backed or PoE-powered deployments without aggressive thermal design. The 96-FBGA JT package is the standard footprint for IoT SoCs (e.g., NXP i.MX RT, Realtek Ameba, ESP-S3) enabling multi-vendor second-sourcing. Pair with a sub-GHz radio and a Wi-Fi 6 module for a complete gateway reference.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MT41K128M16JT — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MT41K128M16JT-125 AAT:K | MT41K128M16JT-125 AIT:K | MT41K128M16JT-107 AAT:K | MT41J128M16JT-125:K | IS43TR16256AL-125KBLI | HGD32G16M16 | K4B2G1646F-BYMA |
|---|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | ISSI | HGCHIPS | Samsung Electronics |
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same |
| Density | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) | 2 Gbit (128Mx16) |
| Supply Voltage | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.5 V (DDR3) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) |
| Max Data Rate | 1600 MT/s (-125 bin) | 1600 MT/s | 1600 MT/s | 1866 MT/s (+17%) | 1600 MT/s | 1600 MT/s | 1600 MT/s | 1600 MT/s |
| Dynamic ODT | Yes (nominal/weak/strong) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| ZQ Calibration | Yes (240 ohm ref) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Write Leveling | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Wide temperature-grade portfolio in same JT footprint (vs IS43TR16256AL-125KBLI)
- DDR3L 1.35 V supply reduces power by 15-20% vs DDR3 (vs MT41J128M16JT-125:K)
- Higher speed bin available (-107, 1866 MT/s) (vs IS43TR16256AL-125KBLI)
Notas de projeto
Estimated: The 96-FBGA at 0.8 mm pitch requires a 4-layer PCB minimum with controlled-impedance routing (50 ohm +/- 10% single-ended for DQ, 100 ohm +/- 10% differential for CK/CK#). Use microvia stack-up (laser-drilled 0.1 mm vias at the BGA breakout) on a 0.8-1.0 mm dielectric core to maintain signal integrity on the fly-by command/address bus. A 240 ohm +/- 1% precision resistor must be tied between ZQ and VSSQ for impedance calibration - tolerance directly impacts ODT accuracy.
Estimated: VDD/VDDQ must be derived from a switching regulator or high-current LDO capable of at least 400 mA peak current with +/- 3% tolerance during read/write bursts. A 100 nF + 10 uF + 100 uF decoupling network is required on each supply pin per Micron's standard DDR3L decoupling recommendation. Place the smallest capacitor closest to each ball, and ensure the VDDQ and VSSQ planes are tied with multiple stitched vias to minimize return-path impedance for the 1600 MT/s -125 or 1866 MT/s -107 data signals.
DDR3 fly-by routing on command/address/control signals is mandatory. Place the memory device on the same side of the PCB as the memory controller with trace lengths tuned such that the CK/CK# pair arrives at each DRAM device within +/- 25 ps of the nominal delay. Use write-leveling during controller initialization to compensate for propagation skew. For point-to-point DQ routing between the controller and a single DRAM, length-match within +/- 50 ps across the full byte lane (DQ0-7 or DQ8-15).
DDR3L SDRAM at 1600 MT/s draws approximately 150 mW active and 10 mW self-refresh. The 96-FBGA package has no exposed thermal pad - heat exits primarily through the BGA balls to the PCB inner planes. For full-temperature industrial -40C to +95C operation, ensure the PCB top-side ground plane beneath the BGA has stitched thermal vias to the inner planes. Junction temperature must remain below 95C in commercial and 105C in automotive variants to meet the datasheet AC timing.
Do not mix DDR3 (MT41J, 1.5 V) and DDR3L (MT41K, 1.35 V) parts on the same memory channel: the VDDQ levels are different and the ODT impedance targets differ. Do not omit the ZQ resistor - dynamic ODT requires calibration at every power-up and at periodic refresh intervals. Do not exceed 1.45 V on VDDQ under any condition including transient spikes: the device's thin-oxide core will be damaged. Finally, the RESET pin (ball K3) must be held low during power-rail ramp-up for at least 200 us to ensure proper initialization.
Informações de conformidade
RoHS compliant per Micron datasheet (Pb-free FBGA). AEC-Q100 qualified for the AAT/AIT variants only - the K (commercial) and IT (industrial) variants are not automotive-grade. Reach SVHC compliant per Micron product declaration. Halogen-free per JEDEC JS709B.
